1 rf power mosfet transistor 10w, 500-1000mhz, 28v m/a-com products released; rohs compliant LF2810A ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. package outline features ? n-channel enhancement mode device ? dmos structure ? lower capacitances for broadband operation ? common source configuration ? lower noise floor ? applications broadband linear operation 500 mhz to 1200 mhz absolute maximum ratings at 25 c parameter rating drain-source voltage 65 gate-source voltage 20 drain-source current 2.8 power dissipation 26.5 junction temperature 200 storage temperature -55 to +150 thermal resistance 6.6 symbol v ds v gs i ds p d t j t stg jc units v v a w c c c/w electrical characteristics at 25c parameter symbol min max units test conditions drain-source breakdown voltage bv dss 65 - v v gs = 0.0 v , i ds = 4.0 ma drain-source leakage current i dss - 2.0 ma v gs = 28.0 v , v gs = 0.0 v gate-source leakage current i gss - 2.0 a v gs = 20.0 v , v ds = 0.0 v gate threshold voltage v gs(th) 2.0 6.0 v v ds = 10.0 v , i ds = 20.0 ma forward transconductance g m 160 - ms v ds = 10.0 v , i ds 200.0 ma , 80-30 s pulse input capacitance c iss - 14 pf v ds = 28.0 v , f = 1.0 mhz output capacitance c oss - 10 pf v ds = 28.0 v , f = 1.0 mhz reverse capacitance c rss - 4.8 pf v ds = 28.0 v , f = 1.0 mhz power gain g p 10 - db v dd = 28.0 v, i dq = 100 ma, p out = 10.0 w, f =1.0 ghz drain efficiency ? d 50 - % v dd = 28.0 v, i dq = 100 ma, p out = 10.0 w, f =1.0 ghz load mismatch tolerance vswr-t - 20:1 - v dd = 28.0 v, i dq = 100 ma, p out = 10.0 w, f =1.0 ghz letter millimeters inches dim min max min max a 20.70 20.96 .815 .825 b 14.35 14.61 .565 .575 c 13.72 14.22 .540 .560 d 6.27 6.53 .247 .257 e 6.22 6.48 .245 .255 f 6.22 6.48 .245 .255 g 1.14 1.40 .045 .055 h 2.92 3.18 .115 .125 j 1.40 1.65 .055 .065 k 1.96 2.46 .077 .097 l 3.61 4.37 .142 .172 m .08 .15 .003 .006 f (mhz) z in ( ? ) z load ( ? ) 500 0.60 - j9.5 10.0 +j17.0 1000 1.4 - j1.0 4.85 + j7.9 1200 1.5 - j3.5 5.7 + j5.7 v dd = 28v, i dq = 100 ma, p out = 10 w typical device impedance z in is the series equivalent in put impedance of the device from gate to source. z load is the optimum series equivalent load impedance as measured from drain to ground.
2 rf power mosfet transistor 10w, 500-1000mhz, 28v m/a-com products released; rohs compliant LF2810A ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical broadband performance curves v ds ( v ) power output vs voltage f =1.0 ghz p in =1.0 w i dq =100 ma power output vs power input v dd =28 v i dq =50 ma power output (w) 12 10 8 6 4 2 0 15 power output (w) 0.5 1.5 power input (w) 1000 mhz 500mhz 14 12 10 8 6 4 2 0 10 20 1 3 2 5 0 1400 mhz efficiency vs frequency v dd =28 v i dq =100 ma p out =10 w efficiency (%) 750 1250 frequency (mhz) 55 50 45 40 1000 500 2.5 frequency (mhz) gain (db) gain vs frequency v dd =28 v i dq =100 ma p out =10 w 20 15 10 5 0 500 1000 700 1200 v ps (v) capacitance (pf) capacitances vs voltage f =1.0mhz 14 12 10 8 6 4 2 0 5 15 25 10 20 30 c oss c iss c rss 30 25 35 1400
3 rf power mosfet transistor 10w, 500-1000mhz, 28v m/a-com products released; rohs compliant LF2810A ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture circuit dimensions test fixture assembly
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